DocumentCode :
413573
Title :
Light dependent current transport mechanisms in chalcogenide solar cells
Author :
Agostinelli, G. ; Dunlop, E.D. ; Batzner, D.L. ; Tiwari, A.N. ; Nollet, P. ; Burgelman, M. ; Köntges, M.
Author_Institution :
IMEC, Leuven, Belgium
Volume :
1
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
356
Abstract :
Light dependent current transport mechanisms are the main reason for the failure of the superposition principle of dark and light IV curves of most chalcogenide solar cells. While the photocurrent collection is nearly constant, a significant variation of the forward bias characteristics of these devices takes place as effect of illumination. Different behaviours can be seen in different cells but the physical phenomenon underlying all these observations is the ´electronic doping´ of the CdS window layer. A high density of deep trap centres with strongly asymmetrical Capture Cross-Section (CCS) changes radically the conductivity and type behaviour of this layer under illumination. The consequent bending and rearrangement of the energy bands modifies the current transport across the device. Different transport mechanism are analysed and modelled in the discussion.
Keywords :
II-VI semiconductors; band structure; cadmium compounds; deep levels; electron traps; photoconductivity; semiconductor doping; solar cells; CdS; CdS window layer; IV curve; asymmetrical capture cross-section; chalcogenide solar cell; conductivity; deep trap centres; electronic doping; energy band; light dependent current transport mechanism; photocurrent collection; superposition principle;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305293
Link To Document :
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