• DocumentCode
    413573
  • Title

    Light dependent current transport mechanisms in chalcogenide solar cells

  • Author

    Agostinelli, G. ; Dunlop, E.D. ; Batzner, D.L. ; Tiwari, A.N. ; Nollet, P. ; Burgelman, M. ; Köntges, M.

  • Author_Institution
    IMEC, Leuven, Belgium
  • Volume
    1
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    356
  • Abstract
    Light dependent current transport mechanisms are the main reason for the failure of the superposition principle of dark and light IV curves of most chalcogenide solar cells. While the photocurrent collection is nearly constant, a significant variation of the forward bias characteristics of these devices takes place as effect of illumination. Different behaviours can be seen in different cells but the physical phenomenon underlying all these observations is the ´electronic doping´ of the CdS window layer. A high density of deep trap centres with strongly asymmetrical Capture Cross-Section (CCS) changes radically the conductivity and type behaviour of this layer under illumination. The consequent bending and rearrangement of the energy bands modifies the current transport across the device. Different transport mechanism are analysed and modelled in the discussion.
  • Keywords
    II-VI semiconductors; band structure; cadmium compounds; deep levels; electron traps; photoconductivity; semiconductor doping; solar cells; CdS; CdS window layer; IV curve; asymmetrical capture cross-section; chalcogenide solar cell; conductivity; deep trap centres; electronic doping; energy band; light dependent current transport mechanism; photocurrent collection; superposition principle;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1305293