DocumentCode
413574
Title
Cu/sub x/S back contact for CdTe solar cells
Author
Kim, Donghwan ; McCandless, Brian E. ; Hegedus, Steven S. ; Birkmire, Robert W.
Author_Institution
Inst. of Energy Conversion, Delaware Univ., Newark, CA, USA
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
360
Abstract
Copper sulfide (Cu/sub x/S) films were studied as a back contact material for CdTe solar cells. The Cu/sub x/S films were made by chemical bath deposition in aqueous solution. Annealing at 200/spl deg/C in Ar improved the performance of the solar cells. Using the CdS/CdTe/Cu/sub x/S/C structure, an open-circuit voltage (V/sub oc/) higher than 840 mV and an energy conversion efficiency higher than 11% were obtained.
Keywords
II-VI semiconductors; annealing; cadmium compounds; copper compounds; liquid phase deposition; semiconductor thin films; solar cells; CdS-CdTe-Cu/sub x/S-C; annealing; aqueous solution; back contact; chemical bath deposition; energy conversion efficiency; open-circuit voltage; solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305294
Link To Document