Title :
Ammonia pretreatment influence on the defect properties of Cu(In,Ga)Se/sub 2/ solar cells from admittance spectroscopy
Author :
Djebbour, Z. ; Dubois, A. ; Saad, S. Ould ; Mencaraglia, D. ; Canava, B. ; Etcheberry, A. ; Vigneron, J. ; Guillemoles, J.F. ; Lincot, D. ; Deleplanque, M.
Author_Institution :
Lab. de Genie Electrique de Paris, Paris VI Univ., France
Abstract :
In thin film polycrystalline CdS/CIGS heterojunction solar cells, understanding the intrinsic and interface defect properties is crucial to optimize their performances. In this paper, we focus our attention on the CdS/CIGS hetero-interface at different stages of its formation. All investigations were carried out on CIGS co-evaporated samples elaborated in pilot-line conditions onto which the CdS layer was deposited by chemical bath deposition (CBD). This latter chemical process involves the use of a NH, solution that modifies the ClGS surface composition. In order to separate the respective role of the NH/sub 3/ bath and the CdS layer thickness , we have investigated samples elaborated with several NH/sub 3/ pretreatment time of CIGS surface prior to CdS deposition. Admittance spectroscopy was used to follow the evolution of the hetero-interface defects properties.
Keywords :
ammonia; copper compounds; crystal defects; gallium compounds; indium compounds; interface structure; liquid phase deposited coatings; semiconductor heterojunctions; semiconductor thin films; solar cells; surface composition; surface treatment; ternary semiconductors; vacuum deposited coatings; CdS-Cu(InGa)Se/sub 2/; NH/sub 3/; admittance spectroscopy; ammonia pretreatment; chemical bath deposition; co-evaporated sample; heterojunction; interface defect properties; layer thickness; solar cell; surface composition;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
