Investigation of pulsed non-melt laser annealing (NLA) of CIGS-based solar cells

Author

Wang, Xuege ; Li, Shene S. ; Huang, C.H. ; Kerr, Lei Li ; Rawal, S. ; Howard, J.M. ; Cracium, V. ; Anderson, T.J. ; Crisalle, O.D.

Author_Institution

Dept. of Material Sci. & Eng., Florida Univ., Gainesville, FL, USA

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

396

Abstract

Pulsed non-melt laser annealing (NLA) has been used to modify the near surface defect and related junction properties in the ClGS solar cells. CIGS films deposited on Mo/glass substrates were annealed by using a 248 nm line Kr excimer laser at selected laser energy densities and pulse number, and characterized by the dual beam optical modulation (DBOM), XRD, SEM, and Hall effect measurements. In addition, selected annealed CdS/CIGS films processed by NLA were fabricated into cells, and characterized by the photo I-V and Q-E measurements. The results suggest that low power (P/sub L/ < 50 mJ/cm/sup 2/) NLA treatment could increase the effective carrier lifetime, mobility, film grain size, and sheet resistance and lower the near-surface defect density in the films, thus improve the performance of CIGS cells.

Keywords

Hall effect; II-VI semiconductors; X-ray diffraction; cadmium compounds; carrier lifetime; carrier mobility; copper compounds; crystal defects; electrical resistivity; gallium compounds; grain size; indium compounds; laser beam annealing; scanning electron microscopy; semiconductor junctions; semiconductor thin films; solar cells; ternary semiconductors; 248 nm; ClGS solar cell; Cu(InGa)Se/sub 2/-CdS; Hall effect; Kr excimer laser; Mo-SiO/sub 2/; Q-E measurement; SEM; X-ray diffraction; XRD; dual beam optical modulation; effective carrier lifetime; film grain size; junction properties; mobility; near-surface defect density; photo I-V measurement; pulsed nonmelt laser annealing; scanning electron microscopy; sheet resistance; surface defect;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305303