Low cost Cu(In,Ga)Se/sub 2/ absorber layers from selenization of precursor materials

Author

Kaelin, M. ; Meyer, T. ; Kurdesau, F. ; Rudmann, D. ; Zogg, H. ; Tiwari, A.N.

Author_Institution

Thin Film Phys. Group, ETH, Zurich, Switzerland

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

404

Abstract

Precursor pastes for Cu(In,Ga)Se/sub 2/ (CIGS) were deposited by a simple and low cost deposition method. Selenization is performed using non-toxic roots to convert the precursor into a ClGS layer. Scanning electron microscopy and energy dispersive X-ray spectroscopy show homogenous films in composition, thickness and morphology, comparable to vacuum evaporated ClGS films. X-ray diffraction results indicate the formation of single phase ClGS. Preliminary processing of solar cells with CdS/ZnO/ZnO:Al layers yielded cell efficiencies of 4%.

Keywords

X-ray chemical analysis; X-ray diffraction; copper compounds; gallium compounds; indium compounds; liquid phase deposition; scanning electron microscopy; semiconductor growth; semiconductor thin films; solar absorber-convertors; solar cells; surface morphology; ternary semiconductors; 4 percent; Cu(InGa)Se/sub 2/-CdS-ZnO-ZnO:Al; X-ray diffraction; absorber layers; cell efficiency; composition; energy dispersive X-ray spectroscopy; homogenous film; low cost deposition method; morphology; nontoxic roots; precursor materials; scanning electron microscopy; selenization; solar cell; thickness;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305305