Title :
Characterization of CuIn(S,Se)/sub 2/ thin films prepared by thermal crystallization from Cu-In-Se precursor in S/Se atmosphere
Author :
Yamaguchi, Toshiyuki ; Nakashima, Mitsuki ; Yoshida, Akira
Author_Institution :
Dept. of Electr. Eng., Wakayama Coll. of Technol., Gobo-shi, Japan
Abstract :
CuIn(S,Se)/sub 2/ thin films were prepared by thermal crystallization from Cu-In-Se precursor in S/Se atmosphere for photovoltaic device applications and their properties were investigated. The S/(S+Se) mole ratio in the crystallized thin films was changed from 0 to 0.93 in monotone with increasing the S/(S+Se) mole ratio in atmosphere. The thin films had a chalcopyrite CuIn(S,Se)/sub 2/ structure and the preferred orientation to the 112 plane. The a- and c-axis constants were decreased with increasing the S/(S+Se) mole ratio in the thin films. The SEM images demonstrated that the grain sizes in CuIn(S,Se)/sub 2/ thin films decreased with the increase in the S/(S+Se) mole ratio.
Keywords :
copper compounds; crystallisation; grain size; indium compounds; lattice constants; scanning electron microscopy; semiconductor thin films; ternary semiconductors; texture; CuIn(SSe)/sub 2/; S/Se atmosphere; SEM image; a-axis constant; c-axis constant; chalcopyrite structure; grain size; photovoltaic device; preferred orientation; thermal crystallization; thin film;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
