DocumentCode :
413586
Title :
Annealing effects on the structure properties of Cu(In,Ga)Se/sub 2/ thin films
Author :
Xu, Chumming ; Xu, Xiaoliang ; Dang, Xueming ; Xu, Jun ; Xie, Jiachun ; Yang, Xiaojie ; Huang, Wenhao ; Liu, Hongtu
Author_Institution :
Dept. of Precision Machinery & Precision Instrum., Univ. of Sci. & Technol. of China, Hefei, China
Volume :
1
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
414
Abstract :
A p-type CuIn/sub 0.7/Ga/sub 0.3/Se/sub 2/ thin films were prepared by novel periodic sequentially-evaporated and vacuum-selenized annealing process. The as-grown films of chalcopyrite structure with (112) preferred orientation were analyzed by X-ray diffraction spectra, and atomic force microscope, respectively. Our results confirmed a phenomenon which some literature indicated recently that the spontaneous decomposition from (220)/(204) surfaces to {112} facets can lead to {112} surface reconstructions in the Cu-poor CIGS films. The films are as fine electronic and structural properties.
Keywords :
X-ray diffraction; annealing; atomic force microscopy; copper compounds; crystal structure; decomposition; gallium compounds; indium compounds; semiconductor thin films; surface reconstruction; ternary semiconductors; texture; (112) preferred orientation; CuIn/sub 0.7/Ga/sub 0.3/Se/sub 2/; X-ray diffraction spectra; annealing effects; atomic force microscope; chalcopyrite structure; p-type thin film; sequential evaporation; spontaneous decomposition; structure properties; surface reconstructions; vacuum selenization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305308
Link To Document :
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