Title :
The element losing in CuInSe/sub 2/-formation from Cu/In/Se stacks
Author :
Zhang, Jiayou ; Sun, Yun ; Liu, Weiyi ; Li, Fengyan ; He, Qing ; Li, Changjian ; Sun, Zhonglin
Author_Institution :
Inst. of Photoelectronics, Nankai Univ., Tianjin, China
Abstract :
The indium losing in CuInSe/sub 2/-formation has been studied in this paper. In order to study the quantity of element losing, Cu/In/Se stacks were prepared onto a well-cleaned glass. The experiments results showed that the indium losing is related to the Cu-In-Se reaction mechanism. Differential Scanning Calorimeter (DSC), X-ray Diffraction (XRD) and Inductively Couple Argon Plasma (ICAP) were used to analyze the reaction mechanism of CuInSe/sub 2/-formation and the indium losing process. The results revealed that the quantity of indium losing is related to Ca/In atomic ratio of the Cu/In/Se stacks. The more Cu/ln atomic ratio is, the more the indium will be lost in CuInSe/sub 2/-formation. Furthermore, the indium losing occurs in the temperature range of 150/spl deg/C to 400/spl deg/C.
Keywords :
X-ray diffraction; copper compounds; differential scanning calorimetry; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; ternary semiconductors; 150 to 400 degC; Cu-In-Se reaction mechanism; CuInSe/sub 2/; SiO/sub 2/; X-ray diffraction; differential scanning calorimeter; inductively couple argon plasma;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
