The element losing in CuInSe/sub 2/-formation from Cu/In/Se stacks

Author

Zhang, Jiayou ; Sun, Yun ; Liu, Weiyi ; Li, Fengyan ; He, Qing ; Li, Changjian ; Sun, Zhonglin

Author_Institution

Inst. of Photoelectronics, Nankai Univ., Tianjin, China

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

418

Abstract

The indium losing in CuInSe/sub 2/-formation has been studied in this paper. In order to study the quantity of element losing, Cu/In/Se stacks were prepared onto a well-cleaned glass. The experiments results showed that the indium losing is related to the Cu-In-Se reaction mechanism. Differential Scanning Calorimeter (DSC), X-ray Diffraction (XRD) and Inductively Couple Argon Plasma (ICAP) were used to analyze the reaction mechanism of CuInSe/sub 2/-formation and the indium losing process. The results revealed that the quantity of indium losing is related to Ca/In atomic ratio of the Cu/In/Se stacks. The more Cu/ln atomic ratio is, the more the indium will be lost in CuInSe/sub 2/-formation. Furthermore, the indium losing occurs in the temperature range of 150/spl deg/C to 400/spl deg/C.

Keywords

X-ray diffraction; copper compounds; differential scanning calorimetry; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; ternary semiconductors; 150 to 400 degC; Cu-In-Se reaction mechanism; CuInSe/sub 2/; SiO/sub 2/; X-ray diffraction; differential scanning calorimeter; inductively couple argon plasma;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305309