Title :
Developement of advanced materials for fabricating thin-film absorber layers
Author :
Banger, Kulbinder K. ; Jin, Michael H. ; Harris, J.D. ; Cowen, Jonathan E. ; Hepp, Aloysius F.
Author_Institution :
Ohio Aerosp. Inst., Brook Park, OH, USA
Abstract :
The syntheses and thermal modulation of ternary single source precursors, based on the [{LR}/sub 2/M/sup 1/(SR´)/sub 2/In(SR´)/sub 2/] architecture in good yields are described. Thermogravimetric analyses (TGA) and Low temperature Differential Scanning Caloriometry, (DSC) demonstrate that controlled manipulation of the steric and electronic properties of either the group five-donor and/or chalcogenide moiety permits directed adjustment of the thermal stability and physical properties of the precursors. TGA-evolved X-ray diffraction studies, EDS and SEM demonstrate that these derivatives afford single-phase I-III-VI/sub 2/ materials at low temperature. In the case where I = Ag, thin films of I-III/sub 5/-VI/sub 8/ type semiconductor are obtained.
Keywords :
X-ray diffraction; differential scanning calorimetry; scanning electron microscopy; semiconductor thin films; solar absorber-convertors; ternary semiconductors; thermal stability; EDS; SEM; X-ray diffraction; advanced material; chalcogenide moiety; electronic properties; low temperature differential scanning calorimetry; ternary single source precursor; thermal modulation; thermal stability; thermogravimetric analysis; thin-film absorber layer;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
