ZnTe:N/ZnO:Al recombination junctions and stability properties of ZnTe:N and ZnO:Al

In order for tandem solar cell structures to be viable in polycrystalline materials it will be necessary to fabricate suitable tunnel junction or recombination junction structures for two terminal devices or to fabricate three transparent electrodes for four-terminal devices. In this paper we present our first attempts to fabricate and test such junctions from reactively sputtered p-ZnTe doped with N and n-ZnO:Al sputtered from ZnO/Al/sub 2/O/sub 3/. Some of our devices have properties qualitatively similar to those expected for such junctions. We present data also on the stability of these materials at high temperatures in various ambients.