Title :
CIGS thin film solar cells with InSe buffer layer
Author :
Gordillo, G. ; Calderón, C. ; Quiñonez, C.
Author_Institution :
Dept. de Fisica, Univ. Nacional de Colombia, Bogota, Colombia
Abstract :
We investigated Cu(In,Ga)Se/sub 2/ (CIGS) based solar cells with In/sub 2/Se/sub 3/ (IS) deposited by evaporation, as buffer layer. Promissory results were obtained using, as buffer layer, a 50 nm thick indium selenide film, grown in the In/sub 2/Se/sub 3/ phase. Preliminary I-V measurements gave the following output parameters for cells fabricated using IS as buffer: J/sub sc/ = 23 mA/cm/sup 2/, V/sub oc/ = 0.48 V, FF /spl ap/ 0.55 and /spl eta/ = 7.4% with an irradiance of 80 mW/cm/sup 2/. Solar cells fabricated using a CdS buffer layer deposited by CBD on a CIGS substrate prepared under the same conditions of fabrication for CIGS/IS/ZnO cells, gave the following results: V/sub oc/ = 0.45 V, J/sub sc/ = 27.5 mA/cm/sup 2/, FF /spl ap/ 0.56 and /spl eta/ = 8.1.
Keywords :
II-VI semiconductors; III-VI semiconductors; cadmium compounds; copper compounds; gallium compounds; indium compounds; liquid phase deposition; semiconductor growth; semiconductor thin films; short-circuit currents; solar cells; ternary semiconductors; thin film devices; vacuum deposition; 0.45 V; 0.48 V; 50 nm; CIGS substrate; CIGS thin film solar cell; Cu(InGa)Se/sub 2/-CdS; Cu(InGa)Se/sub 2/-In/sub 2/Se/sub 3/; I-V measurement; buffer layer; chemical bath deposition; evaporation; fill factor; irradiance; open circuit voltage; short circuit current density;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
