DocumentCode :
413605
Title :
Numerical modeling of CIGS and CdTe solar cells: setting the baseline
Author :
Gloeckler, M. ; Fahrenbruch, A.L. ; Sites, J.R.
Author_Institution :
Dept. of Phys., Colorado State Univ., Fort Collins, CO, USA
Volume :
1
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
491
Abstract :
Numerical modeling of polycrystalline thin-film solar cells is an important strategy to test the viability of proposed physical explanations and to predict the effect of physical changes on cell performance. In general, this must be done with only partial knowledge of input parameters. Nevertheless, for consistent comparisons between laboratories, it is extremely useful to have a common starting point, or baseline. We will discuss guidelines that should be considered assigning input parameters for numerical modeling. Consequently specific baseline parameters for CIGS and CdTe are proposed. The modeling results for these baseline cases are presented and it is discussed how the baseline cases serve to describe some of the most important complications that are often found in experimental ClGS and CdTe solar cells.
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; gallium compounds; indium compounds; semiconductor device models; semiconductor thin films; solar cells; ternary semiconductors; CdTe; Cu(InGa)Se/sub 2/; cell performance; input parameter; numerical modeling; polycrystalline thin-film solar cell; specific baseline parameter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305328
Link To Document :
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