Title :
Chemical bath deposited (CBD)-ZnO buffer layer for CIGS solar cells
Author :
Mikami, Rui ; Miyazaki, Hisashi ; Abe, Takashi ; Yamada, Akira ; Konagai, Makoto
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
Zinc oxide was grown by a chemical bath deposition (CBD) method and it was applied to a buffer layer for Cu(InGa)Se/sub 2/ solar cells. The film was deposited with a solution of zinc acetate (Zn(CH/sub 3/COO)) and ethylenediamine (NH/sub 2/CH/sub 2/CH/sub 2/NH/sub 2/) or ammonia (NH/sub 4/OH). The films grown with a NH/sub 4/OH-base solution showed good morphology and adhesion compared with those grown with an ethylenediamine-base solution. Chemical species in a solution were calculated and it was found that Zn(OH)/sub 2/ was a possible film precursor for CBD-ZnO process. From the XRD measurements, it was found that the film was preferentially oriented toward [002] plane. The CBD-ZnO films were applied to solar cells and an efficiency of 14.3% was achieved. Furthermore, the solar cells with this new buffer layer didn´t show the light-soaking effect.
Keywords :
X-ray diffraction; adhesion; copper compounds; gallium compounds; indium compounds; liquid phase deposition; semiconductor growth; semiconductor thin films; solar cells; surface morphology; texture; wide band gap semiconductors; zinc compounds; 14.3 percent; CIGS solar cell; Cu(InGa)Se/sub 2/-ZnO; X-ray diffraction; XRD; [002] plane preferential orientation; adhesion; ammonia; buffer layer; chemical bath deposition; chemical species; efficiency; ethylenediamine; ethylenediamine-base solution; light-soaking effect; morphology; zinc acetate;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
