DocumentCode
413618
Title
Effect of boron doping on the properties of chemically deposited CdS films
Author
Lee, Jaehyeong ; Yi, Junsin ; Yang, Keajoon
Author_Institution
Sch. of Electron. & Inf. Eng., Kunsan Nat. Univ., South Korea
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
543
Abstract
Boron-doped CdS films were prepared by chemical bath deposition using boric acid as dopant source, and their electrical and optical properties were investigated. As the boron doping concentration increased, the resistivity significantly decreased and exhibited the lowest resistivity of 2 /spl Omega/-cm at 0.01 of [B/Cd] ratio. The characteristics of the CdS/CdTe solar cell improved when boron doped CdS film as the window layer was used.
Keywords
II-VI semiconductors; boron; cadmium compounds; electrical resistivity; liquid phase deposition; semiconductor doping; semiconductor thin films; solar cells; 2 ohmcm; CdS-CdTe; boron doping; chemical bath deposition; electrical properties; optical properties; resistivity; solar cell; window layer;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305341
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