Title :
Radiation response of Cu(In,Ga)Se/sub 2/ solar cells
Author :
Jasenek, A. ; Rau, U. ; Weinert, K. ; Schock, H.W. ; Werner, J.H.
Author_Institution :
Inst. of Phys. Electron., Stuttgart Univ., Germany
Abstract :
This contribution reviews the response of Cu(In,Ga)Se/sub 2/ thin-film solar cells to irradiation with high-energy electrons and protons of various energies and compares the results with the radiation response of other thin-film and monocrystalline solar cells for space applications. We analyze the post-irradiation thermal annealing behavior of Cu(In,Ga)Se/sub 2/ in the temperature range of 350 K < T < 420 K. This material also displays illumination-enhanced recovery without elevated temperatures. Unlike other semiconductor materials that exhibit illumination-enhanced annealing, Cu(In,Ga)Se/sub 2/ does not show enduring device recovery after minority carrier injection in the dark.
Keywords :
annealing; copper compounds; electron beam effects; gallium compounds; indium compounds; minority carriers; proton effects; radiation hardening (electronics); semiconductor thin films; solar cells; ternary semiconductors; 350 to 420 K; Cu(InGa)Se/sub 2/; high-energy electron; high-energy proton; illumination-enhanced annealing; minority carrier injection; post-irradiation thermal annealing; radiation response; space application; thin-film solar cell;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
