DocumentCode :
413641
Title :
Advanced GaInP/Ga(In)As/Ge triple junction space solar cells
Author :
Strobl, G. ; Dietrich, K. ; Hilgarth, J. ; Köstler, W. ; Kern, R. ; Nell, M. ; Rothenbacher, S. ; Bett, A.W. ; Dimroth, F. ; Meusel, M. ; Campesato, R. ; Flores, C. ; Timò, G. ; Smekens, G. ; Vanbegin, J. ; Raskin, G. ; Geens, W. ; LaRoche, G. ; Hey, G. ;
Author_Institution :
RWE Space Solar Power GmbH, Heilbronn, Germany
Volume :
1
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
658
Abstract :
A programme for the development of advanced triple-junction space solar cells in Europe was initiated and supported by ESA and DLR. RWE Space Solar Power (D) has been leading a research and development consortium including UMICORE (B), CESI (I) with ENE (B), University of Paris (F), FhG-ISE (D) and Astrium (D). This paper presents results of the phase 2 work of this programme, in which triple junction solar cells with AMO-efficiencies of 27% have been realized. Additionally, the pre-development of the next generation of space solar cells with efficiencies above 30% is described.
Keywords :
III-V semiconductors; aerospace instrumentation; elemental semiconductors; gallium compounds; germanium; indium compounds; solar cells; 27 percent; GaInP-Ga(In)As-Ge; efficiency; space solar power; triple junction space solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305367
Link To Document :
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