Title :
Consideration for improving radiation-resistance of InGaP/GaAs and InGaP/X/Ge multi-junction solar cells
Author :
Yamaguchi, Masafumi ; Takamoto, Tatsuya ; Khan, Aurangzeb ; Ando, Koshi ; Adachi, Masakazu ; Dharmarasu, N. ; Imaizumi, Mitsuru ; Matsuda, Sumio
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
Abstract :
In this study, the mechanism for the unique minority-carrier injection-enhanced annealing phenomena and the origin of the major radiation-induced defect in InGaP top cell materials are discussed in comparison with InP. The optimal design for the InGaP base layer thickness of the InGaP/GaAs 2-junction cells for current matching at EOL is examined. It is also found that the radiation tolerance of InGaP/middle cell/Ge 3-junction tandem solar cells can be improved by thinning the InGaP top cell layer thickness, by reducing base layer carrier concentration of the GaAs bottom cells, and by looking for radiation-resistant middle cell materials.
Keywords :
annealing; carrier density; charge injection; gallium arsenide; gallium compounds; indium compounds; minority carriers; radiation hardening (electronics); solar cells; InGaP-GaAs; InGaP-Ge; annealing; carrier concentration; current matching; minority-carrier injection; multi-junction solar cell; radiation tolerance; radiation-induced defect; radiation-resistance;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
