Consideration for improving radiation-resistance of InGaP/GaAs and InGaP/X/Ge multi-junction solar cells

Author

Yamaguchi, Masafumi ; Takamoto, Tatsuya ; Khan, Aurangzeb ; Ando, Koshi ; Adachi, Masakazu ; Dharmarasu, N. ; Imaizumi, Mitsuru ; Matsuda, Sumio

Author_Institution

Toyota Technol. Inst., Nagoya, Japan

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

685

Abstract

In this study, the mechanism for the unique minority-carrier injection-enhanced annealing phenomena and the origin of the major radiation-induced defect in InGaP top cell materials are discussed in comparison with InP. The optimal design for the InGaP base layer thickness of the InGaP/GaAs 2-junction cells for current matching at EOL is examined. It is also found that the radiation tolerance of InGaP/middle cell/Ge 3-junction tandem solar cells can be improved by thinning the InGaP top cell layer thickness, by reducing base layer carrier concentration of the GaAs bottom cells, and by looking for radiation-resistant middle cell materials.

Keywords

annealing; carrier density; charge injection; gallium arsenide; gallium compounds; indium compounds; minority carriers; radiation hardening (electronics); solar cells; InGaP-GaAs; InGaP-Ge; annealing; carrier concentration; current matching; minority-carrier injection; multi-junction solar cell; radiation tolerance; radiation-induced defect; radiation-resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305374