DocumentCode :
413652
Title :
Non-empirical modelization of space degradation of multijunction cells
Author :
Bourgoin, J.C. ; Zazoui, M. ; Makham, S. ; Hadrami, M. ; Sun, G.C. ; Signorini, C. ; Taylor, S.J. ; Strobl, G. ; Dietrich, Robert ; Bett, A.W. ; Gilard, O.
Author_Institution :
GESEC R&D, Avon, France
Volume :
1
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
709
Abstract :
The fluence dependences of the short circuit and the open circuit voltage, induced by an irradiation, depend on a single parameter k/spl sigma/, product of the introduction rates of the defects responsible for non radiative recombination times their trapping cross section. This parameter, characteristic of a given material, can be determined experimentally, hence allowing the computation of the degradation for any type of cell or multijunction cell. The validity of this procedure is demonstrated and illustrated in the case of the degradation of the short circuit current of 2J GaInP/GaAs/Ge cells.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; semiconductor device models; short-circuit currents; solar cells; GaInP-GaAs-Ge; multijunction cells; nonempirical modelization; nonradiative recombination time; open-circuit voltage; short-circuit current; space degradation; trapping cross section;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305380
Link To Document :
بازگشت