DocumentCode :
413653
Title :
High energy proton degradation in GaAs solar cells
Author :
Warner, Jeffrey H. ; Walters, Robert J. ; Messenger, Scott R. ; Summers, Geoffrey P.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Volume :
1
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
712
Abstract :
In this paper we compare the energy dependences (1-500 MeV) of the proton damage coefficients for p/sup +/n GaAs solar cells with previously reported calculations of nonionizing energy loss (NIEL). For proton energies E<10 MeV, the damage coefficients all follow an approximate 1/E dependence. For E>10 MeV, the damage coefficients vary but are bounded by the total and elastic NIEL.
Keywords :
III-V semiconductors; gallium arsenide; proton effects; radiation hardening (electronics); solar cells; 1 to 500 MeV; GaAs; elastic NIEL; high energy proton degradation; nonionizing energy loss; proton damage coefficient; solar cell; total NIEL;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305381
Link To Document :
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