DocumentCode :
413673
Title :
New design of SA based on single and multi-junction GaAs/Ge SC intended for long-term operation on spacecrafts
Author :
Kagan, M. ; Nadorov, V. ; Ivanov, V. ; Matveev, V. ; Smeken, G. ; Flores, C. ; Gabetta, G.
Author_Institution :
KVANT, Moscow, Russia
Volume :
1
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
801
Abstract :
We report new design of solar panels with application of single and multi-junction solar cells (SC) based on GaAs/Ge, GaInP/GaAs/Ge located on mesh semi-rigid frames. Earlier the similar frames were used in development of many types of SA based on mono-Si for Russian spacecrafts. Their application in case of highly effective SC based on GaAs/Ge, GaInP-GaAs/Ge is considered for the first time and is connected with the necessity to reach optimum energy-mass characteristics, to provide the best temperature modes during spacecraft operation. The obtained results testify on potential of application of considered type of solar panels on spacecraft.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; solar cells; GaAs-Ge; GaInP-GaAs-Ge; mesh semi-rigid frame; multi-junction solar cell; optimum energy-mass characteristics; single-junction solar cell; solar panel; spacecraft;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305404
Link To Document :
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