DocumentCode :
413679
Title :
Outdoor operation of GaInP/GaAs/Ge triple junction concentrator solar cells up to 1000 suns
Author :
Cotal, H. ; Sherif, R. ; Paredes, A. ; Glenn, G. ; Krut, D. ; Karam, N.H. ; Kiehl, J. ; Emery, K.
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
Volume :
1
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
825
Abstract :
Results from GaInP/GaAs/Ge, triple-junction concentrator solar cells of larger area than what is typically reported are presented for outdoor measurements up to 1000 suns. The IV characteristics of solar cell assemblies measured under steady illumination at various concentration levels are reported. For a cell aperture area of 0.605/spl times/0.605 cm/sup 2/, the efficiency reached 34.2% at 161 suns and is in close agreement with 33.4% at 52 suns measured by the HIPSS at NREL for cells of the same type and size. Near 1000 suns, the outdoor efficiency is 27.88% with fill factor of 77.7%. The dependence of the V/sub oc/ on concentration is linear from the data obtained from the HIPSS and nonlinear, specifically at higher concentration levels, for the outdoor tests. Their different V/sub oc/ behavior with concentration is due to heat effects. All outdoors test results showed no cell failures even as high as 1000 suns.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; solar cells; solar energy concentrators; 27.88 percent; 33.4 percent; 34.2 percent; GaInP-GaAs-Ge; IV characteristics; cell aperture area; cell efficiency; fill factor; heat effects; open-circuit voltage; triple junction concentrator solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305410
Link To Document :
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