Title :
Accelerated ageing tests on III-V solar cells
Author :
van Riesen, S. ; Bett, A.W. ; Willeke, G.P.
Author_Institution :
Fraunhofer Inst. for Solar Energy Syst., Freiburg, Germany
Abstract :
Different methods for accelerated ageing have been performed on single-junction AlGaAs/GaAs cells with ARC. The storage in a 95/spl deg/C/100% humidity environment has been found to be the most appropriate test procedure. The factor of acceleration has been experimentally estimated. After definition of the ageing procedure, III-V single-junction solar cells with different structures have been examined. It was found, that the material of the window layer is the most critical parameter for durability. AlGaInP yields hard-wearing devices, while AlGaAs can cause problems.
Keywords :
III-V semiconductors; ageing; aluminium compounds; gallium arsenide; gallium compounds; life testing; semiconductor device testing; solar cells; 95 degC; AlGaAs-GaAs; III-V solar cell; accelerated ageing test; critical parameter; durability; hard-wearing device; window layer;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
