DocumentCode
413681
Title
Accelerated ageing tests on III-V solar cells
Author
van Riesen, S. ; Bett, A.W. ; Willeke, G.P.
Author_Institution
Fraunhofer Inst. for Solar Energy Syst., Freiburg, Germany
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
837
Abstract
Different methods for accelerated ageing have been performed on single-junction AlGaAs/GaAs cells with ARC. The storage in a 95/spl deg/C/100% humidity environment has been found to be the most appropriate test procedure. The factor of acceleration has been experimentally estimated. After definition of the ageing procedure, III-V single-junction solar cells with different structures have been examined. It was found, that the material of the window layer is the most critical parameter for durability. AlGaInP yields hard-wearing devices, while AlGaAs can cause problems.
Keywords
III-V semiconductors; ageing; aluminium compounds; gallium arsenide; gallium compounds; life testing; semiconductor device testing; solar cells; 95 degC; AlGaAs-GaAs; III-V solar cell; accelerated ageing test; critical parameter; durability; hard-wearing device; window layer;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305413
Link To Document