Title :
Back junction solar cells on n-type multicrystalline and CZ silicon wafers
Author :
Cuevas, A. ; Samundsett, C. ; Kerr, M.I. ; Macdonald, D.H. ; Mackel, H. ; Altermatt, P.P.
Author_Institution :
Fac. of Eng. & IT, Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
The high lifetimes recently measured for n-type multicrystalline and CZ silicon make innovative solar cells possible. This paper presents back junction solar cells made on n-type silicon, including a variety of simple designs based on the use of aluminum to form the pn junction, either with uniform or localized p/sup +/ regions. The feasibility of n/sup +/np/sup +/ continuous junction cast multicrystalline Si cells is demonstrated with a 15% efficiency back junction device (J/sub sc/=33.3 mAcm/sup -2/,V/sub oc/=580 mV, FF=0.776, 4 cm/sup 2/, 180 /spl mu/m thickness). Voltages up to 594 mV have been measured on some mc-Si devices. Using n-type CZ silicon, a 15.8% efficiency has been obtained (J/sub sc/=33 mAcm/sup -2/, V/sub oc/=600 mV, FF=0.8). Localized rear Al junction devices on n-type FZ silicon have reached V/sub oc/=645 mV and J/sub sc/=27 mAcm/sup -2/ (no AR coating), showing the way for improved performance.
Keywords :
aluminium; carrier lifetime; crystal growth from melt; elemental semiconductors; p-n junctions; silicon; solar cells; 15 percent; 15.8 percent; 580 mV; 645 mV; CZ silicon wafer; Si-Al; back junction solar cell; fill factor; lifetime; multicrystalline silicon wafer; n/sup +/np/sup +/ continuous junction; open-circuit voltage; pn junction; short-circuit current density;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
