DocumentCode
413719
Title
Startling photoluminescence quantum efficiencies from crystalline silicon
Author
Trupke, Thorsten ; Zhao, Jianhua ; Wang, Aihua ; Corkish, Richard ; Green, Martin A.
Author_Institution
Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, Univ. of New South Wales, Sydney, NSW, Australia
Volume
2
fYear
2003
fDate
18-18 May 2003
Firstpage
997
Abstract
External photoluminescence (PL) quantum efficiencies of more than 6% at room temperature and of more than 10% at lower temperature from crystalline silicon wafers are presented. The radiative recombination probability under optimum injection conditions is shown to exceed 20% at room temperature, which demonstrates that radiative recombination can be one of the dominant recombination channels in high quality silicon.
Keywords
elemental semiconductors; photoluminescence; silicon; 293 to 298 K; PL quantum efficiency; Si; crystalline silicon wafers; external photoluminescence quantum efficiency; radiative recombination probability; room temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306079
Link To Document