Title :
Design criteria for amorphous/crystalline silicon heterojunction solar cells - a simulation study
Author :
Stangl, R. ; Froitzheim, A. ; Schmidt, M. ; Fuhs, W.
Author_Institution :
Dept. Silizium Photovoltaik, Hahn-Meitner-Inst. Berlin, Germany
Abstract :
Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H(n)/c-Si(p), are investigated by means of numerical computer simulation. The influence of (1) the a-Si:H(n) emitter thickness, (2) the defect density of the emitter/wafer interface and (3) the TCO/emitter front contact system on the solar cell-performance is studied and compared with experimental results. The use of an intrinsic a-Si:H(i) buffer layer and of a p-doped a-Si:H(p) back surface field layer is addressed, modelling TCO/a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(p) solar cell structures. Some general design criteria for a-Si:H/c-Si heterojunction solar cells are derived, suggesting an optimum emitter thickness for a given (measured) front contact TCO/emitter built-in potential.
Keywords :
amorphous semiconductors; elemental semiconductors; passivation; semiconductor device models; semiconductor heterojunctions; silicon; solar cells; Si; amorphous-crystalline silicon heterojunction solar cells; back surface field layer; defect density; emitter front contact system; emitter thickness; emitter-wafer interface; front contact transparent conductive oxide-emitter built in potential; intrinsic buffer layer; numerical computer simulation; solar cell performance; solar cell structures;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
