Title :
Electrical property evaluation of polycrystalline silicon thin film on textured substrate
Author :
Muhida, Riza ; Kawamura, Tomohiro ; Harano, Tomokazu ; Okajima, Masaya ; Matsui, Takuya ; Toyama, Toshihiko ; Okamoto, Hiroaki ; Honda, Shinya ; Takakura, Hideyuki ; Hamakawa, Yoshihiro
Author_Institution :
Dept. of Phys. Sci., Osaka Univ., Japan
Abstract :
The electrical conductivities of the poly-Si thin films deposited on the substrates with different surface texture have been studied using the alternating current (AC)-conductivity measurement technique. The activation energy of the dark conductivities for poly-Si films with deposited on relative low of the root mean square (rms) roughness (/spl sigma/) of 22 nm is close to 0.55 eV indicating intrinsic nature. On other hand, with increase in /spl sigma/>37 nm, poly-Si films exhibits n-type character. Changes in electrical conductivities of the poly-Si thin films in conjunction with the results on photovoltaic performances, optical reflectance, and microstructure are also discussed.
Keywords :
crystal microstructure; dark conductivity; elemental semiconductors; reflectivity; semiconductor thin films; silicon; solar cells; surface roughness; surface texture; Si; activation energy; alternating current conductivity measurement; dark conductivities; electrical conductivity; electrical properties; microstructure; optical reflectance; photovoltaic performances; polycrystalline silicon thin film; root mean square roughness; surface texture; textured substrate;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
