Title :
Improved thermally stable surface and bulk passivation of PECVD SiN/sub x/:H using N/sub 2/ and SiH/sub 4/
Author :
Weeber, A.W. ; Rieffe, H.C. ; Goris, M.J.A.A. ; Hong, J. ; Kessels, W.M.M. ; van de Sanden, M.C.M. ; Soppe, W.J.
Author_Institution :
ECN Solar Energy, Petten, Netherlands
Abstract :
Excellent and thermally stable surface passivation of SiN/sub x/:H grown using N/sub 2/ and SiH/sub 4/ as precursor gases has been obtained with microwave PECVD. The thermal stability of the surface passivation is even better than that for layers deposited with NH/sub 3/ and SiH/sub 4/. Additionally, we found that the bulk passivating properties of SiN/sub x/:H deposited with N/sub 2/+SiH/sub 4/ are as good as that of the standard SiN/sub x/:H deposited with NH/sub 3/+SiH/sub 4/. Absorption at shorter wavelengths in SiN/sub x/:H layers deposited with N/sub 2/+SiH/sub 4/ is somewhat higher. Solar cell efficiencies are comparable for both nitrides.
Keywords :
absorption coefficients; extinction coefficients; hydrogen; passivation; plasma CVD; refractive index; semiconductor growth; semiconductor thin films; silicon compounds; solar cells; thermal stability; wide band gap semiconductors; SiN:H; absorption coefficient; bulk passivating properties; extinction coefficient; microwave PECVD; refractive index; solar cell efficiencies; thermal stability; thermally stable surface passivation;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
