Title :
Passivation effect of SiN deposited by plasma chemical vapor deposition for thin film c-Si solar cells
Author :
Yamamoto, Yukie ; Uraoka, Yukiham ; Fuyuki, Takashi
Author_Institution :
Graduate Sch. of Mater. Sci, Nara Inst. of Sci. & Technol., Japan
Abstract :
Epitaxial c-Si layers with a typical thickness of 10 /spl mu/m were grown. Surface passivation effects by SiN films deposited by direct PECVD were analyzed relating with contained negative and positive fixed charges and obtained cell performances. The solar cell passivated by SiN film with positive charges showed improved IQE in the short wavelength region, which suggested the effect of induced n/sup ++//n/sup +/ front junction. Very small surface recombination velocity of 4.6/spl times/10/sup 3/ cm/sec and high cell performances /spl eta/=11%, J/sub sc/=26.3 mA/cm/sup 2/, V/sub oc/=609 mV) could be realized. Polarity effects on passivation are discussed.
Keywords :
MIS structures; current density; elemental semiconductors; passivation; plasma CVD; semiconductor epitaxial layers; silicon; silicon compounds; solar cells; surface recombination; 10 micron; 4600 cm/s; MIS structures; SiN; SiN films deposition; current density; direct PECVD; epitaxial crystalline Si layers; internal quantum efficiency; lighting; negative fixed charges; plasma chemical vapor deposition; polarity effects; positive fixed charges; surface passivation effects; surface recombination velocity; thin film crystalline Si solar cells;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
