Passivation effect of SiN deposited by plasma chemical vapor deposition for thin film c-Si solar cells

Author

Yamamoto, Yukie ; Uraoka, Yukiham ; Fuyuki, Takashi

Author_Institution

Graduate Sch. of Mater. Sci, Nara Inst. of Sci. & Technol., Japan

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1151

Abstract

Epitaxial c-Si layers with a typical thickness of 10 /spl mu/m were grown. Surface passivation effects by SiN films deposited by direct PECVD were analyzed relating with contained negative and positive fixed charges and obtained cell performances. The solar cell passivated by SiN film with positive charges showed improved IQE in the short wavelength region, which suggested the effect of induced n/sup ++//n/sup +/ front junction. Very small surface recombination velocity of 4.6/spl times/10/sup 3/ cm/sec and high cell performances /spl eta/=11%, J/sub sc/=26.3 mA/cm/sup 2/, V/sub oc/=609 mV) could be realized. Polarity effects on passivation are discussed.

Keywords

MIS structures; current density; elemental semiconductors; passivation; plasma CVD; semiconductor epitaxial layers; silicon; silicon compounds; solar cells; surface recombination; 10 micron; 4600 cm/s; MIS structures; SiN; SiN films deposition; current density; direct PECVD; epitaxial crystalline Si layers; internal quantum efficiency; lighting; negative fixed charges; plasma chemical vapor deposition; polarity effects; positive fixed charges; surface passivation effects; surface recombination velocity; thin film crystalline Si solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306119