Application of PECVD-SiC as intermediate layer in crystalline silicon thin-film solar cells

We present first results on the application of PECVD silicon carbide as intermediate layer for crystalline silicon thin-film solar cells. Silicon carbide layers were deposited by PECVD and characterized by Auger spectrometry and SEM. The subsequent sample processing included high-temperature anneal, deposition of a silicon seeding layer by CVD, recrystallization of the seeding layer by zone-melting, epitaxial growth of the base layer and finally a solar cell process where conventional and one-side contact scheme were realized. All process steps were successfully accomplished but characterization of the samples revealed that the silicon carbide intermediate layers were partly damaged or perforated. Efficiencies up to 7.1% were reached using a conventional contact scheme.