Title :
Silicon carbide barrier layer on ceramic substrates for crystalline silicon thin-film modules with an integrated series connection
Author :
Kunz, T. ; Burkert, I. ; Auer, R. ; Brendel, R. ; Buss, W. ; Campe, H.V. ; Schulz, M.
Author_Institution :
Bavarian Center for Appl. Energy Res., Erlangen, Germany
Abstract :
We report on the deposition of SiC-layers in a newly constructed high-temperature chemical vapor deposition system. With this system SiC-layers are deposited onto tape-casted SiC-ceramic substrates (10/spl times/10 cm/sup 2/) at deposition temperatures ranging from 1200 to 1450/spl deg/C to study the chemical stability, the smoothness, and the electrical resistivity of the SiC-layers. The SiC-layers have a resistivity of 1.6/spl times/10/sup 8/ /spl Omega/cm when boron doping is used to compensate unintended doping. This layer resistivity is sufficiently high to fabricate an integrated series connection on a conductive ceramic substrate.
Keywords :
boron; chemical vapour deposition; doping profiles; electrical resistivity; modules; semiconductor growth; semiconductor thin films; silicon compounds; surface morphology; surface roughness; wide band gap semiconductors; 1.6/spl times/10/sup 8/ ohmcm; 1200 to 1450 degC; SiC layer deposition; SiC:B; boron doping; chemical stability; chemical vapor deposition system; crystalline silicon thin film modules; doping profiles; electrical resistivity; integrated series connection; silicon carbide barrier layer; smoothness;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
