• DocumentCode
    413779
  • Title

    Silicon liquid phase epitaxy for epilift solar cells

  • Author

    Weber, K.J. ; Blakers, A.W. ; Stocks, M.J. ; Thompson, A.

  • Author_Institution
    Centre for Sustainable Energy Syst., Canberra, ACT, Australia
  • Volume
    2
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    1265
  • Abstract
    Silicon liquid phase epitaxy (LPE) is a suitable silicon deposition process for the fabrication of thin film silicon solar cells. In this paper we discuss the design and operation of a batch LPE system which is a first step towards mass production. The issue of melt cost can be addressed by efficient recovery of the melt and by switching to more widely available metals, such as tin. Layers grown by the epilift technique using a tin melt have displayed excellent coverage and morphology. Epitaxial layers can be detached by both chemical and mechanical means, with only minimal consumption of the substrate material.
  • Keywords
    elemental semiconductors; liquid phase epitaxial growth; mass production; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; silicon; solar cells; tin; Si; Si-Sn; chemical detachment; epilift solar cells; epitaxial layers; mass production; mechanical detachment; silicon LPE; silicon deposition process; silicon liquid phase epitaxy; substrate material; switching; thin film silicon solar cell; tin melt recovery;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1306149