Title :
15.12% silicon thin film solar cell on p/sup ++/ c-Si substrate prepared by RTCVD
Author :
Xudong, Li ; Ying, Xu ; Wenjing, Wang ; Hui, Shen ; Yuwen, Zhao ; Benkun, Ma
Author_Institution :
Beijing Solar Energy Res. Inst., China
Abstract :
The thin film polycrystalline silicon solar cells have been fabricated on inactive P/sup ++/ mono-crystalline silicon substrates by rapid thermal CVD technique. With the graphite boat covered by pyrogenative graphite layer, the quality of the growth layer has been increased. By varying the thickness of the active layer, the best result was obtained at the thickness of 37 /spl mu/m with a 2 /spl mu/m depth p/sup ++/ buffer layer deposited simultaneously. The fill factor could be improved by a suitable annealing in forming gas ambience. The best conversion efficiency of 15.12% (AM1.5G, 24.5/spl deg/C )has been achieved without cell´s surface texture.
Keywords :
annealing; chemical vapour deposition; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; vapour phase epitaxial growth; 2 micron; 24.5 degC; 37 micron; P/sup ++/ monocrystalline silicon substrates; RTCVD; Si; active layer thickness; annealing; conversion efficiency; fill factor; p/sup ++/ buffer layer; pyrogenative graphite layer; rapid thermal CVD; surface texture; thin film polycrystalline silicon solar cells;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
