DocumentCode :
413788
Title :
Texturing techniques and resulting solar cell parameters on tri-silicon material
Author :
Sontag, D. ; Hahn, G. ; Fath, P. ; Bucher, E. ; Krühler, W.
Author_Institution :
Fac. of Phys., Konstanz Univ., Germany
Volume :
2
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
1304
Abstract :
Tri-crystalline silicon material (Tri-Si) is a promising alternative to mono-crystalline CZ silicon because of a faster crystallization process and higher wafer stability. The orientation of the three crystals [110] is different to the [100] orientation in CZ material typically used in the photovoltaic industry. As a consequence the common alkaline texture technique using KOH or NaOH cannot be applied. For this reason we compared several alternative texturing methods like mechanical grooving and acidic texture etching, which work independently of crystal orientations. Solar cells were processed from these wafers, and an overview of their surface morphology as well as the resulting cell parameters is given. By applying an antireflection coating we reached the highest efficiencies reported on Tri-Si material.
Keywords :
antireflection coatings; crystal orientation; elemental semiconductors; etching; silicon; solar cells; surface morphology; surface recombination; surface texture; Si; acidic texture etching; alkaline texture; antireflection coating; cell parameters; crystal orientation; crystallization; internal quantum efficiencies; mechanical grooving; monocrystalline Czochralski silicon; photovoltaic industry; solar cell; surface morphology; tricrystalline silicon material; wafer stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1306160
Link To Document :
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