DocumentCode
413792
Title
Thin monocrystalline silicon films for solar cells
Author
Solanki, C.S. ; Bilyalov, R.R. ; Beaucarne, G. ; Poortmans, J.
Author_Institution
IMEC, Leuven, Belgium
Volume
2
fYear
2003
fDate
18-18 May 2003
Firstpage
1320
Abstract
Thin film monocrystalline silicon solar cells based on porous silicon layer transfer processes could be cost-effective because of their lower consumption of material use and the potential for high efficiency. Novel techniques of porous silicon film separation, obtained by anodization of silicon, are presented. Anodization techniques for porous silicon film separation are classified as either one-step or two-step. Two-step anodization provides better control over the one-step method in terms of porous silicon film thickness that can be separated. The substrate reusability of both the techniques is assessed through roughness measurements. A monocrystalline epitaxial layer is deposited on annealed porous silicon, and is then used to make a solar cell. A cell of 12% efficiency is realized in 18 /spl mu/m thick epitaxial layer with an excellent short circuit current of 32.9 mA/cm/sup 2/.
Keywords
CVD coatings; elemental semiconductors; porous semiconductors; semiconductor epitaxial layers; short-circuit currents; silicon; solar cells; surface roughness; 18 micron; Si; annealed porous silicon; anodization; monocrystalline epitaxial layer; porous silicon film separation; porous silicon layer transfer processes; short circuit current; surface roughness; thin film monocrystalline silicon solar cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306164
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