DocumentCode :
413792
Title :
Thin monocrystalline silicon films for solar cells
Author :
Solanki, C.S. ; Bilyalov, R.R. ; Beaucarne, G. ; Poortmans, J.
Author_Institution :
IMEC, Leuven, Belgium
Volume :
2
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
1320
Abstract :
Thin film monocrystalline silicon solar cells based on porous silicon layer transfer processes could be cost-effective because of their lower consumption of material use and the potential for high efficiency. Novel techniques of porous silicon film separation, obtained by anodization of silicon, are presented. Anodization techniques for porous silicon film separation are classified as either one-step or two-step. Two-step anodization provides better control over the one-step method in terms of porous silicon film thickness that can be separated. The substrate reusability of both the techniques is assessed through roughness measurements. A monocrystalline epitaxial layer is deposited on annealed porous silicon, and is then used to make a solar cell. A cell of 12% efficiency is realized in 18 /spl mu/m thick epitaxial layer with an excellent short circuit current of 32.9 mA/cm/sup 2/.
Keywords :
CVD coatings; elemental semiconductors; porous semiconductors; semiconductor epitaxial layers; short-circuit currents; silicon; solar cells; surface roughness; 18 micron; Si; annealed porous silicon; anodization; monocrystalline epitaxial layer; porous silicon film separation; porous silicon layer transfer processes; short circuit current; surface roughness; thin film monocrystalline silicon solar cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1306164
Link To Document :
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