• DocumentCode
    413792
  • Title

    Thin monocrystalline silicon films for solar cells

  • Author

    Solanki, C.S. ; Bilyalov, R.R. ; Beaucarne, G. ; Poortmans, J.

  • Author_Institution
    IMEC, Leuven, Belgium
  • Volume
    2
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    1320
  • Abstract
    Thin film monocrystalline silicon solar cells based on porous silicon layer transfer processes could be cost-effective because of their lower consumption of material use and the potential for high efficiency. Novel techniques of porous silicon film separation, obtained by anodization of silicon, are presented. Anodization techniques for porous silicon film separation are classified as either one-step or two-step. Two-step anodization provides better control over the one-step method in terms of porous silicon film thickness that can be separated. The substrate reusability of both the techniques is assessed through roughness measurements. A monocrystalline epitaxial layer is deposited on annealed porous silicon, and is then used to make a solar cell. A cell of 12% efficiency is realized in 18 /spl mu/m thick epitaxial layer with an excellent short circuit current of 32.9 mA/cm/sup 2/.
  • Keywords
    CVD coatings; elemental semiconductors; porous semiconductors; semiconductor epitaxial layers; short-circuit currents; silicon; solar cells; surface roughness; 18 micron; Si; annealed porous silicon; anodization; monocrystalline epitaxial layer; porous silicon film separation; porous silicon layer transfer processes; short circuit current; surface roughness; thin film monocrystalline silicon solar cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1306164