Large area monocrystalline silicon solar cell using SOD

The process parameters for the fabrication of large area mono-crystalline silicon solar cells using Spin-on doping (SOD) and IR lamp furnace annealing have been investigated. The removal of the spin-on glass residuals formed during IR lamp furnace annealing which generate recombination centres, high resistances, and increased leakage current thereby lowering the solar cell efficiency is key issue of this paper. We have applied a novel chemical treatment to remove the organic residual using hot HCl treatment. This novel chemical treatment improves greatly the solar cell leakage current leading to increased shunt resistance and also the efficiency of the mono-crystalline solar cells. This paper reports on the successful fabrication of 13.1% efficiency large area (103 mm/spl times/103 mm) mono-crystalline silicon solar cells with PECVD silicon nitride antireflection coating.