• DocumentCode
    413824
  • Title

    Interdigitated backside buried contact solar cells

  • Author

    Guo, Jiun-Hua ; Cotter, Jeffrey E.

  • Author_Institution
    Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, Univ. of New South Wales, Sydney, NSW, Australia
  • Volume
    2
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    1463
  • Abstract
    Backside contact solar cells, such as point contact and interdigitated back contact designs, have demonstrated remarkable performance; however, they often require four to six photolithographic steps to fabricate the rear surface. The buried-contact solar cell technology offers a means to substitute photolithographic processing with laser-lithographic processing, which is currently utilized in large-scale commercial production of BP Solar´s Saturn solar cells. In this paper, we describe experimental work to analyze and correct a shunt resistance problem found in interdigitated backside buried contact (IBBC) solar cells. Preliminary results show that IBBC solar cells have potential for high efficiency.
  • Keywords
    buried layers; laser materials processing; photolithography; point contacts; solar cells; interdigitated backside buried contact solar cells; laser lithographic processing; photolithographic processing; point contact designs; shunt resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1306200