Title :
Integrated series-interconnected thin-film Si solar cells with 6 V and 12 V output voltage
Author :
Peters, S. ; Leihkau, R. ; Wagemann, H.G.
Author_Institution :
TU Berlin, Germany
Abstract :
A concept to increase the output voltage of solar cells using monolithically series-interconnected thin-film Si solar cells on SOI-wafers is presented. By using this concept 10 or 20 single cells (active areas: 0.4 cm/sup 2/ or 0.2 cm/sup 2/) have been processed on mono-x-Si SOI-wafers with a 15 /spl mu/m thick device layer. Two different kinds of SOI-material [/spl rho//sub p(Si active)/=(2...3) /spl Omega/cm and (0.1...0.9) /spl Omega/cm] have been used. A special technique permits the insulation of single cells on the burried oxide. Under insolation AM1.5G (100 mW/cm/sup 2/) open circuit voltage of 6.2 V (10 interconnected cells) and 12.6 V (20 interconnected cells), short circuit current densities of 23 mA/cm/sup 2/ and efficiencies up to 11% have been achieved. Measured IQE and emitter doping evaluation can be used to increase the efficiency furthermore.
Keywords :
current density; elemental semiconductors; interconnections; semiconductor device metallisation; semiconductor doping; semiconductor thin films; silicon; silicon-on-insulator; solar cells; 0.1 to 0.9 ohmcm; 12.6 V; 2 to 3 ohmcm; 6.2 V; Si; Si SOI wafers; emitter doping; integrated series interconnected thin film Si solar cells; open circuit voltage; short circuit current density; thick device layer;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
