Nucleation control towards the poly-Si thin films with large grain size utilizing intermittent supply of dichlorosilane

Author

Ishikawa, Yasuaki ; Uraoka, Yukiharu ; Fuyuki, Takashi

Author_Institution

Graduate Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1503

Abstract

In order to obtain polycrystalline Si (poly-Si) thin films with large grain size, we propose a nucleation control method by intermittent supply of Si source gas in atmospheric pressure chemical vapor deposition. By intermittent supply of dichlorosilane as Si source gas, the nucleus density was controlled in a range from 10/sup 5/ to 10/sup 7/ cm/sup -2/. The maximum grain size of 22 /spl mu/m with the film thickness of 15 /spl mu/m was obtained. By optimizing the conditions of an intermittent ratio and time, relatively high preferential orientation of (220) over 65% was achieved.

Keywords

chemical vapour deposition; elemental semiconductors; etching; grain size; nucleation; semiconductor growth; semiconductor thin films; silicon; surface texture; 15 micron; Si; Si source gas; chemical vapor deposition; dichlorosilane; etching; grain size; intermittent time; nucleation control method; nucleus density; poly-Si thin films; preferential orientation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306211