Title :
Development of amorphous silicon/microcrystalline silicon tandem solar cells
Author :
Goya, Saneyuki ; Nakano, Yoji ; Yamashita, Nobuki ; Morita, Shoji ; Yonekura, Yoshimichi
Author_Institution :
Mitsubishi Heavy Ind. Ltd., Yokohama, Japan
Abstract :
Using very high frequency plasma CVD with a ladder-shaped electrode, manufacturing technologies for a-Si solar cells having 1.4 m/spl times/1.1 m large area glass substrate and stable efficiency of about 8% have been developed. Based on these technologies, we are currently engaged in the development of a-Si//spl mu/c-Si tandem solar cells. It was found effective to adjust the hydrogen dilution ratio so as to obtain a higher quality /spl mu/c-Si i-layer, and to deposit film under mild plasma conditions so as to optimize the p/i interface. An extremely high Voc of 0.573 V was achieved for a /spl mu/c-Si single solar cell with a /spl mu/c-SiC p-layer. The /spl mu/c-Si bottom cell features a higher quality /spl mu/c-Si i-layer and an optimized p/i interface for improved Voc, in addition to optimized fabrication processes for the back contact, delivering improved Jsc as well. As a result, initial efficiency of 13.1% has been achieved for a small area cell.
Keywords :
amorphous semiconductors; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; 0.573 V; Si-SiC; amorphous silicon tandem solar cells; glass substrate; hydrogen dilution ratio; ladder shaped electrode; manufacturing technologies; microcrystalline SiC p-layer; microcrystalline silicon tandem solar cells; optimized fabrication processes; plasma CVD; stable efficiency;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3