DocumentCode
413852
Title
Electrochemically deposited zinc oxide for light trapping in thin film silicon solar cell
Author
Toyama, N. ; Hayashi, R. ; Sonoda, Y. ; Iwata, M. ; Miyamoto, Y. ; Otoshi, H. ; Saito, K. ; Ogawa, K.
Author_Institution
E Dev. Center, Canon Inc., Tokyo, Japan
Volume
2
fYear
2003
fDate
18-18 May 2003
Firstpage
1601
Abstract
Electrochemically deposited ZnO films which have the appropriate texture surface for light trapping effect in solar cells are presented. A voltage was applied between anodes and Ag-coated-stainless steel substrate as a cathode in the heated aqueous solution of Zn(NO/sub 3/)/sub 2/ and ZnO films were formed on the substrate. The specular-and-diffuse and diffuse reflectance at 800nm wavelength were 94.3% and 91.7%, respectively. The polycrystalline ZnO grain size was about infrared wavelength, which gave appropriate texture for the light trapping effect in solar cells. Thin film Si triple junction solar cells were deposited on ZnO/Ag-coated-stainless steel substrate. The performance of 13.4% and a total photocurrent density of 31.51 mA/cm/sup 2/ have been achieved at large area (801.6 cm/sup 2/). We believe that this electrochemical deposition technique is best realized by adoption of the electrically conductive substrate like stainless steel substrate.
Keywords
II-VI semiconductors; current density; electrodeposition; elemental semiconductors; grain size; infrared spectra; photoconductivity; reflectivity; semiconductor growth; semiconductor thin films; silicon; solar cells; surface texture; zinc compounds; Ag coated stainless steel substrate; adoption; aqueous solution; diffuse reflectance; electrically conductive substrate; electrochemical deposition; grain size; infrared wavelength; light trapping; photocurrent density; polycrystalline ZnO films; texture surface; thin film silicon solar cell; triple junction solar cells; zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306234
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