Title :
Photoinduced volume changes in doped a-Si:H films
Author :
Sobajima, Y. ; Kamiguchi, H. ; Iida, T. ; Mori, K. ; Yoshida, N. ; Nonomura, S.
Author_Institution :
Graduate Sch. of Eng., Gifu Univ., Japan
Abstract :
Photoinduced volume changes in B and P doped a-Si:H films prepared by plasma enhanced chemical vapor deposition (PECVD) method have been studied. It is found that the magnitude of photoinduced volume expansion (/spl Delta/V/V) in doped films is larger (/spl Delta/V/V/spl sim/6/spl times/10/sup -5/) up to a doping ratio of 0.5% than that of undoped films of /spl Delta/V/V/spl sim/10/sup -6/. And, the photo-response of the conductivity degrades with doping ratio. These results cannot be explained by monotonous movements of Fermi level with doping ratio. The origin of the result is proposed to be local structure changes in a-Si:H network by doping.
Keywords :
amorphous semiconductors; boron; elemental semiconductors; hydrogen; phosphorus; photoconductivity; plasma CVD; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; Fermi level; Si:H,B; Si:H,P; amorphous Si:H films; doped films; doping ratio; local structural change; photoconductivity; photoinduced volume changes; photoinduced volume expansion; plasma enhanced chemical vapor deposition; Chemical vapor deposition; Doping; Laser modes; Laser transitions; Optical films; Optical sensors; Photoconductivity; Photovoltaic cells; Plasma chemistry; Substrates;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka
Print_ISBN :
4-9901816-0-3
