Title :
Hydrogenated silicon carbon films prepared by hot wire chemical vapor deposition using monomethylsilane
Author :
Miyajima, Shinsuke ; Yamada, Akira ; Konagai, Makoto
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
Hydrogenated microcrystalline silicon carbon (/spl mu/c-Si/sub 1-x/C/sub x/:H) films were deposited by hot wire chemical vapor deposition (HWCVD) using a gas mixture of silane, hydrogen and monomethylsilane. We could successfully deposited both /spl mu/c-Si/sub 1-x/C/sub x/:H film whose body was Si microcrystallites embedded in a-Si/sub 1-x/C/sub x/:H and /spl mu/c-3C-SiC:H film whose body was 3C-SiC microcrystallites embedded in a-Si/sub 1-x/C/sub x/:H. The band gap of the /spl mu/c-Si/sub 1-x/C/sub x/:H film estimated from collection efficiencies of Schottky diodes is almost same as that of a /spl mu/c-Si:H film. /spl mu/c-3C-SiC:H film had a columnar structure with a lateral grain size of about 20 nm and a band gap of 2.49 eV.
Keywords :
Schottky diodes; absorption coefficients; amorphous semiconductors; chemical vapour deposition; dark conductivity; grain size; hydrogen; hydrogenation; noncrystalline structure; semiconductor growth; semiconductor thin films; silicon compounds; solar cells; wide band gap semiconductors; Schottky diodes; Si/sub 1-x/C/sub x/:H; absorption coefficients; band gap; columnar structure; dark conductivity; grain size; hot wire CVD; hot wire chemical vapor deposition; hydrogenated microcrystalline silicon carbon films; monomethylsilane; silane gas mixture; solar cells;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
