Title :
High quality a-Si/sub 1-X/C/sub X/:H window layers prepared by Cat-CVD method using graphite catalyzer under low thermal radiation conditions
Author :
Sugita, Ken ; Itoh, Masaya ; Masuda, Atsushi ; Matsumura, Hideki
Author_Institution :
Sch. of Mater. Sci., Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan
Abstract :
High quality a-Si/sub 1-x/C/sub x/:H films can be prepared by catalytic chemical vapor deposition (Cat-CVD) method by using both graphite catalyzer and C/sub 2/H/sub 2/ gas as carbon source. Stable fabrication of a-Si/sub 1-x/C/sub x/:H films by Cat-CVD method using tungsten or tantalum wires, which are easily broken by carbonization, has been difficult so far for stable deposition. Using graphite catalyzer, there is no change in the catalyzer surface even after deposition for longer than 30 h. Wide band gap p-layer for Cat-CVD a-Si solar cell is prepared by this method.
Keywords :
amorphous semiconductors; chemical vapour deposition; heat radiation; semiconductor growth; semiconductor thin films; silicon compounds; solar cells; wide band gap semiconductors; Si solar cell; Si/sub 1-X/C/sub X/:H window layer; Si/sub 1-x/C/sub x/:H; amorphous Si solar cell; carbon source; carbonization; catalytic CVD; catalytic chemical vapor deposition; catalyzer surface; graphite catalyzer; tantalum wires; thermal radiation; wide band gap p-layer;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
