DocumentCode
413883
Title
Amorphous silicon solar cells at high deposition rates using newly developed PECVD
Author
Komoda, M. ; Niira, K. ; Senta, H. ; Nishimura, T. ; Hakuma, H. ; Okui, H. ; Aramaki, K. ; Okada, Y. ; Tomita, K. ; Higuchi, H. ; Arimune, H.
Author_Institution
Kyocera Corp., Shiga, Japan
Volume
2
fYear
2003
fDate
18-18 May 2003
Firstpage
1733
Abstract
Catalyzer assisted PECVD was successfully applied for enhancing the conversion efficiency and the photo-stability of amorphous silicon solar cells. By choosing a hydrogen dilution ratio of process gas and a catalyzer temperature, an initial conversion efficiency of 10.1% has been achieved for a single junction a-Si:H(p-i-n) solar cell prepared at a deposition rate of 2.8 nm/s. Furthermore a stabilized conversion efficiency of 8.2% has been achieved at a deposition rate of 0.8 nm/s.
Keywords
amorphous semiconductors; elemental semiconductors; energy gap; hydrogen; optical constants; plasma CVD; semiconductor growth; semiconductor junctions; semiconductor thin films; silicon; solar cells; Si:H; catalyzer assisted PECVD; catalyzer temperature; conversion efficiency; deposition rate; hydrogen dilution ratio; optical band gap; photostability; single junction amorphous silicon solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306267
Link To Document