Title :
Fast and highly stabilized protocrystalline silicon multilayer solar cell
Author :
Myong, Seung Yeop ; Konagai, Makoto ; Lim, Koeng Su
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., KAIST, Daejeon, South Korea
Abstract :
We have investigated a pin-type protocrystalline silicon (pc-Si:H) multilayer solar cell fabricated by employing a silicon-carbide double p layer structure and a layered structure of multilayer processing through alternate H/sub 2/ dilution. We find that its initial conversion efficiency is drastically improved by incorporating a hydrogenated boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) buffer layer at the p/i interface. Remarkably, the pc-Si:H multilayer absorber exhibits a superior light-soaked metastability to the conventional amorphous silicon (a-Si:H) absorber. Therefore, we have successfully achieved a highly stabilized efficiency of 9.0% without using any back reflector.
Keywords :
Raman spectra; amorphous semiconductors; boron; elemental semiconductors; hydrogen; nanostructured materials; semiconductor superlattices; silicon; solar absorber-convertors; solar cells; H/sub 2/ dilution; Raman spectra; Si-H multilayer absorber; Si:H,B; amorphous silicon absorber; conversion efficiency; hydrogenated boron-doped nanocrystalline silicon carbide buffer layer; light soaked metastability; multilayer processing; pin-type protocrystalline silicon multilayers; protocrystalline silicon multilayer solar cell; silicon carbide double p-layer structure;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
