Fast and highly stabilized protocrystalline silicon multilayer solar cell

Author

Myong, Seung Yeop ; Konagai, Makoto ; Lim, Koeng Su

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., KAIST, Daejeon, South Korea

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1737

Abstract

We have investigated a pin-type protocrystalline silicon (pc-Si:H) multilayer solar cell fabricated by employing a silicon-carbide double p layer structure and a layered structure of multilayer processing through alternate H/sub 2/ dilution. We find that its initial conversion efficiency is drastically improved by incorporating a hydrogenated boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) buffer layer at the p/i interface. Remarkably, the pc-Si:H multilayer absorber exhibits a superior light-soaked metastability to the conventional amorphous silicon (a-Si:H) absorber. Therefore, we have successfully achieved a highly stabilized efficiency of 9.0% without using any back reflector.

Keywords

Raman spectra; amorphous semiconductors; boron; elemental semiconductors; hydrogen; nanostructured materials; semiconductor superlattices; silicon; solar absorber-convertors; solar cells; H/sub 2/ dilution; Raman spectra; Si-H multilayer absorber; Si:H,B; amorphous silicon absorber; conversion efficiency; hydrogenated boron-doped nanocrystalline silicon carbide buffer layer; light soaked metastability; multilayer processing; pin-type protocrystalline silicon multilayers; protocrystalline silicon multilayer solar cell; silicon carbide double p-layer structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306268