• DocumentCode
    413885
  • Title

    Thermal annealing characteristics of amorphous silicon-based solar cells incorporating stable protocrystalline silicon and unstable microcrystalline silicon at the onset of a microcrystalline regime

  • Author

    Ahn, Jun Yong ; Jun, Kyung Hoon ; Konagai, Makoto ; Lim, Koeng Su

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Sci. & Technol., Daejeon, South Korea
  • Volume
    2
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    1741
  • Abstract
    We investigated the light-soaking behaviors and the thermal annealing kinetics of amorphous silicon-based solar cells incorporating hydrogen-diluted films as i-layers deposited at several hydrogen dilution ratios. From the investigation, we confirmed that the protocrystalline silicon was most stable against light soaking, and also that the film deposited at the onset of the microcrystalline regime, which were known to have the most competent device quality and stability, was less stable. Charged dangling bonds defects caused by inhomogeneous microstructure of the onset of the microcrystalline regime, was suggested as one of reasons for the instability at the onset regime.
  • Keywords
    Staebler-Wronski effect; amorphous semiconductors; annealing; chemical vapour deposition; crystal microstructure; dangling bonds; elemental semiconductors; hydrogen; semiconductor thin films; silicon; solar cells; transmission electron microscopy; Si:H; amorphous silicon based solar cells; charged dangling bond defect; hydrogen-diluted films; i-layers deposition; light soaking property; microcrystalline regime; microcrystalline silicon; microstructure; protocrystalline silicon; thermal annealing; transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1306269