Title :
Modified pulsed PECVD technique for nano-crystalline silicon solar cells: an effect of i-layer growth temperature
Author :
Das, U.K. ; Centurion, E. ; Morrison, S. ; Williamson, D.L. ; Madan, A.
Author_Institution :
MVSyst. Inc., Golden, CO, USA
Abstract :
The pulsed PECVD technique allows an increase in the electron density during the ´ON´ cycle, while in the ´OFF´ cycle it neutralizes the ions responsible for dust formation in the plasma. We have developed a modified pulsed PECVD technique, which has the inherent ability to reduce powder formation in the plasma and to grow nc-Si:H p-i-n solar cells. An efficiency of /spl sim/7.5% (FF of 0.69) at an i-layer thickness of /spl sim/1.4 /spl mu/m has been obtained by optimizing the i-layer growth temperature. The 7.5% efficiency device is (220) oriented with I/sub 220//I/sub 111/ value of /spl sim/2.0 and exhibits no significant Si-O bonding in FTIR, which yields a hydrogen content of /spl sim/7 at%.
Keywords :
Fourier transform spectra; amorphous semiconductors; current density; electron density; elemental semiconductors; infrared spectra; nanostructured materials; p-i-n diodes; plasma CVD; semiconductor growth; semiconductor thin films; short-circuit currents; silicon; solar cells; 1.4 micron; FTIR spectra; OFF cycle; ON cycle; Si; current density; electron density; hydrogen content; i-layer growth temperature; nanocrystalline Si:H p-i-n solar cells; neutralisation; powder formation reduction; pulsed PECVD; short-circuit currents;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
