Title : 
Large area thin film Si tandem module production using VHF plasma with a ladder-shaped electrode
         
        
            Author : 
Noda, Matsuhei ; Nishimiya, Tatsuyuki ; Yamaguchi, Kengou ; Kawamura, Keisuke ; Sonobe, Hiroshi ; Kuroda, Masahiro ; Yamada, Akira ; Takatsuka, Hiromu ; Yamauchi, Yasuhiro ; Takeuchi, Yoshiaki
         
        
            Author_Institution : 
Nagasaki Res. & Dev. Center, Mitsubishi Heavy Ind. Ltd., Nagasaki, Japan
         
        
        
        
        
        
            Abstract : 
The use of thin-film silicon for solar cells is a highly promising approach and MHI has developed the world´s largest area deposition technology for a-Si modules with 1.1 m/spl times/1.4 m substrate. Next generation a-Si/ microcrystalline-Si (/spl mu/c-Si) tandem modules have also been developed. 1 m/sup 2/-class large-scale VHF plasma uniformity was confirmed under pressure and frequency conditions of 133 Pa and 60/spl sim/100 MHz for /spl mu/c-Si film deposition. In addition, tandem modules sized 40 cm/spl times/50 cm have been fabricated in our test apparatus as a first step, and initial efficiency of 11.2% for a tandem module (total area of 1800 cm/sup 2/) was obtained. We are targeting tandem module efficiency of 12% by 2003.
         
        
            Keywords : 
amorphous semiconductors; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; 133 Pa; 60 to 100 MHz; Si; VHF plasma enhanced chemical vapour deposition; amorphous-Si/ microcrystalline-Si tandem modules; ladder shaped electrode; microcrystalline-Si film deposition; semiconductor growth; solar cells; tandem module efficiency; thin film Si tandem module production;
         
        
        
        
            Conference_Titel : 
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
         
        
            Conference_Location : 
Osaka, Japan
         
        
            Print_ISBN : 
4-9901816-0-3