• DocumentCode
    413913
  • Title

    An investigation of amorphous silicon solar cells with a gettering layer

  • Author

    Luczak, K. ; De Mont-Marin, G. Dubois ; Lund, C.P. ; Jennings, P.J. ; Cornish, J.C.L.

  • Author_Institution
    Dept. of Phys. & Energy Studies, Murdoch Univ., WA, Australia
  • Volume
    2
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    1856
  • Abstract
    Hydrogenated amorphous silicon solar cells (a-Si:H) with a modified intrinsic layer (in this case a so called "gettering layer") show an interesting pattern of photo-degradation during long exposure to simulated sunlight. This work presents some initial results from a careful examination of the behaviour of minority carrier lifetimes and spectral responses of standard, normal cells and cells with a modified intrinsic layer at all stages throughout the photo-degradation. The observed changes in the spectral responses and minority carrier lifetimes during degradation are remarkably different in the two types of solar cells under investigation. Cells with a modified intrinsic layer seem to be more stable during all stages of prolonged photo-degradation. We suspect that processes involving the formation of light induced defects and their migration inside the intrinsic layer can at least partially explain the differences in changes observed in these samples.
  • Keywords
    amorphous semiconductors; carrier lifetime; elemental semiconductors; getters; hydrogen; minority carriers; noncrystalline defects; semiconductor thin films; silicon; solar cells; Si:H; gettering layer; hydrogenated amorphous silicon solar cells; intrinsic layer; light induced defects; minority carrier lifetimes; photodegradation; spectral responses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1306300