DocumentCode :
413913
Title :
An investigation of amorphous silicon solar cells with a gettering layer
Author :
Luczak, K. ; De Mont-Marin, G. Dubois ; Lund, C.P. ; Jennings, P.J. ; Cornish, J.C.L.
Author_Institution :
Dept. of Phys. & Energy Studies, Murdoch Univ., WA, Australia
Volume :
2
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
1856
Abstract :
Hydrogenated amorphous silicon solar cells (a-Si:H) with a modified intrinsic layer (in this case a so called "gettering layer") show an interesting pattern of photo-degradation during long exposure to simulated sunlight. This work presents some initial results from a careful examination of the behaviour of minority carrier lifetimes and spectral responses of standard, normal cells and cells with a modified intrinsic layer at all stages throughout the photo-degradation. The observed changes in the spectral responses and minority carrier lifetimes during degradation are remarkably different in the two types of solar cells under investigation. Cells with a modified intrinsic layer seem to be more stable during all stages of prolonged photo-degradation. We suspect that processes involving the formation of light induced defects and their migration inside the intrinsic layer can at least partially explain the differences in changes observed in these samples.
Keywords :
amorphous semiconductors; carrier lifetime; elemental semiconductors; getters; hydrogen; minority carriers; noncrystalline defects; semiconductor thin films; silicon; solar cells; Si:H; gettering layer; hydrogenated amorphous silicon solar cells; intrinsic layer; light induced defects; minority carrier lifetimes; photodegradation; spectral responses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1306300
Link To Document :
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