ESR studies of hydrogenated nanocrystalline silicon carbide

Author

Chevaleevski, Oleg ; Seung Yeop Myong ; Miyajima, Shinsuke ; Konagai, Makoto ; Lim, Koeng Su

Author_Institution

Dept. of EE & CS, KAIST, Daejeon, South Korea

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1859

Abstract

Thin films of the intrinsic hydrogenated nanocrystalline silicon carbide (i-nc-SiC:H) with different crystalline content were prepared using mercury-sensitized photo-CVD technique and characterized by Raman and XRD measurements. The dark conductivity temperature dependent measurements indicated the thermally activated transport. Spin defect densities were studied by ESR measurements. A broad (2 mT) ESR resonance line with g-factor around g=2.007 was detected. With carbon content increase DB density decreases from N/sub S//spl sim/10/sup 19/cm/sup -3/ to around 10/sup 18/cm/sup -3/. It was found that the defect concentration and electronic properties of the films are mainly controlled by film crystallinity hindering with carbon content increase.

Keywords

CVD coatings; Raman spectra; X-ray diffraction; dark conductivity; g-factor; nanostructured materials; paramagnetic resonance; semiconductor thin films; silicon compounds; wide band gap semiconductors; ESR resonance; Raman spectra; SiC:H; XRD; carbon content; dark conductivity; electronic properties; g-factor; intrinsic hydrogenated nanocrystalline silicon carbide; mercury sensitized photo CVD technique; spin defect density; thermal activated transport; thin film crystallinity;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306301